| PART |
Description |
Maker |
| CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture
From old datasheet system
|
Cypress Semiconductor Corp.
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| KM732V688 KM732V688L |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| CY7C1383C-117BGC CY7C1383C-100AC CY7C1383C-100BZI |
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BGC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS881Z32BD-200IV GS881Z36BD-200IV GS881Z18BD-200IV |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 32 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
